Effects of Spontaneous and Piezoelectric Polarization on Spontaneous Emission Rate of Blue LEDs on SiC Substrates


Article Preview

High power InGaN-based blue LEDs have been commercialized despite the presence of a high dislocation density in the heteroepitaxial structures. Traditional trial-and-error techniques are very inefficient for improving the process of MOVCD. We analyze the effects of spontaneous and piezoelectric polarization on spontaneous emission rate of blue LEDs on SiC substrate by adjusting screening values and barrier doped concentration. The simulation results indicate to improve characteristics of blue LEDs on SiC substrate, interfacial charges for piezoelectric and polarization should get equilibrium with crystal defects and barrier doped concentration. There is an optimization point.



Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan




Y. F. Wang, "Effects of Spontaneous and Piezoelectric Polarization on Spontaneous Emission Rate of Blue LEDs on SiC Substrates", Advanced Materials Research, Vols. 383-390, pp. 6897-6901, 2012

Online since:

November 2011





[1] S. F. Chichibu, Y. Kawakami, and T. Sota, in Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, ed. S. Nakamura and S.F. Chichibu, Taylor and Francis, NewYork, (2000).

[2] J. Edmond and J. Lagaly. Developing Nitride-Based Blue LEDs on SiC Substrates, JOM , 1997, 9, 24.

DOI: https://doi.org/10.1007/bf02914346

[3] V. Harle, B. Hahn, H. J. Lugaauer, G. Bruderl, D. Eisert, U. Strauss, A. Lell, and N. Hiller, Compound Semiconductors 2000, 6, 81.

[4] F. A. Ponce, B. S. Krusor, J. S. Major, Jr., W. E. Plano, and D. F. Welch, Microstructure of GaN epitaxy on SiC using AlN buffer layers, Appl. Phys. Lett. 1995, 67, 410.

DOI: https://doi.org/10.1063/1.114645

[5] T. W. Weeks, Jr., M. D. Bremser, K. S. Ailey, E. Carlson, W. G. Perry, and R. F. Davis, GaN thin films deposited via organometallic vapor phase epitaxy onα(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers, Appl. Phys. Lett. 1995, 67, 401.

DOI: https://doi.org/10.1063/1.114642

[6] S. Tanaka, S. Iwai, and Y. Aoyagi, J. Cryst. Growth 1997, 170, 329.

[7] D. L. Smith and C. Mailhiot, Phys. Rev. Lett. 58, 1264 ~(1987).

[8] F. Bernardini and V. Fiorentini, Phys. Rev. B 56, R10024 ~(1997).

[9] V. Fiorentini, F. Bernardini, and O. Ambacher, Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures, Appl. Phys. Lett., vol. 80, p.1204, (2002).

DOI: https://doi.org/10.1063/1.1448668

[10] F. Della Sala, A. Di Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, and J. -M. Jancu, Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures, Appl. Phys. Lett., vol. 74, p.2002–2004, (1999).

DOI: https://doi.org/10.1063/1.123727

[11] Joachim, Piprek, Semiconductor Optoelectronic Devices, Introduction to Physics and Simulation, Academic Press, An imprint of Elsevier Science, pp.187-203, (2003).

[12] T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, and S. Nakamura, Luminescence spectra from InGaN multiquantum wells heavily doped with Si, Appl. Phys. Lett. 1998, 72, 3329.

DOI: https://doi.org/10.1063/1.121594

[13] Y. H. Cho, J. J. Song, S. Keller, M. S. Minsky, E. Hu, U. K. Mishra, and S. P. DenBaars, Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells, Appl. Phys. Lett. 1998, 73, 1128.

DOI: https://doi.org/10.1063/1.122105

[14] Yen-Kuang Kuo, Sheng-Horng Yen, Miao-Chan and TsaiBo-Ting Liou, Effect of spontaneous and piezoelectric polarization on the optical characteristics of blue light-emitting diodes, Proc. SPIE, Vol. 6669, 66691I (2007).

DOI: https://doi.org/10.1016/j.optcom.2009.01.014