High power InGaN-based blue LEDs have been commercialized despite the presence of a high dislocation density in the heteroepitaxial structures. Traditional trial-and-error techniques are very inefficient for improving the process of MOVCD. We analyze the effects of spontaneous and piezoelectric polarization on spontaneous emission rate of blue LEDs on SiC substrate by adjusting screening values and barrier doped concentration. The simulation results indicate to improve characteristics of blue LEDs on SiC substrate, interfacial charges for piezoelectric and polarization should get equilibrium with crystal defects and barrier doped concentration. There is an optimization point.