Electrical Properties of Multilayer Synthesized CuInSi Thin Film
Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.
P. Luan et al., "Electrical Properties of Multilayer Synthesized CuInSi Thin Film", Advanced Materials Research, Vols. 383-390, pp. 822-825, 2012