Electrical Properties of Multilayer Synthesized CuInSi Thin Film

Abstract:

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Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

822-825

DOI:

10.4028/www.scientific.net/AMR.383-390.822

Citation:

P. Luan et al., "Electrical Properties of Multilayer Synthesized CuInSi Thin Film", Advanced Materials Research, Vols. 383-390, pp. 822-825, 2012

Online since:

November 2011

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Price:

$35.00

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