Electronic Transport Properties of Single-Walled Zigzag Silicon Carbide Nanotubes with Antisite Defects

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The electronic transport properties are the basis for investigations on silicon carbide nanotube (SiCNT), which are suitable to develop novel nanometer electronic devices. The electronic transport properties of Single-Walled (8, 0) SiCNTs with antisite defects are investigated with the method combined Non-Equilibrium Green’s function with density functional theory. Results show that the similarity on electronic transport properties of the nanotube with different defects is high. Under a bias value greater than 1.0 V, a nearly exponential relationship between the bias and the current is achieved, which originates from more orbital participating in its transport properties caused by the increase of the bias.

Info:

Periodical:

Advanced Materials Research (Volumes 403-408)

Edited by:

Li Yuan

Pages:

1130-1134

DOI:

10.4028/www.scientific.net/AMR.403-408.1130

Citation:

J. X. Song and H. X. Liu, "Electronic Transport Properties of Single-Walled Zigzag Silicon Carbide Nanotubes with Antisite Defects", Advanced Materials Research, Vols. 403-408, pp. 1130-1134, 2012

Online since:

November 2011

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$35.00

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