Electronic Transport Properties of Single-Walled Zigzag Silicon Carbide Nanotubes with Antisite Defects


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The electronic transport properties are the basis for investigations on silicon carbide nanotube (SiCNT), which are suitable to develop novel nanometer electronic devices. The electronic transport properties of Single-Walled (8, 0) SiCNTs with antisite defects are investigated with the method combined Non-Equilibrium Green’s function with density functional theory. Results show that the similarity on electronic transport properties of the nanotube with different defects is high. Under a bias value greater than 1.0 V, a nearly exponential relationship between the bias and the current is achieved, which originates from more orbital participating in its transport properties caused by the increase of the bias.



Advanced Materials Research (Volumes 403-408)

Edited by:

Li Yuan




J. X. Song and H. X. Liu, "Electronic Transport Properties of Single-Walled Zigzag Silicon Carbide Nanotubes with Antisite Defects", Advanced Materials Research, Vols. 403-408, pp. 1130-1134, 2012

Online since:

November 2011




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