Design and Simulation a Low Voltage Actuated RF MEMS Switch with Improve RF Characteristics


Article Preview

This paper present, the design and simulation of the Ka to v band RF-MEMS capacitive switch. The mechanic design and analysis of the RF-MEMS switches are based on both the finite element method and the full-wave electromagnetic simulation. A double-beam switch with a high impedance short transmission line is proposed to improve RF characteristics. The electronic characteristics, of the switches including insertion and return losses in up-state position, were more than -0.11 dB and less than -23 dB , respectively and isolation on down-state position was more than -30 dB on 50 GHZ frequency. In order to make lower actuated voltage, a serpentine spring folded suspension beam and low actuated area were used so that some important issues such as life and reliability of switch were considered in design.



Advanced Materials Research (Volumes 403-408)

Edited by:

Li Yuan




T. Z. Ershadi et al., "Design and Simulation a Low Voltage Actuated RF MEMS Switch with Improve RF Characteristics", Advanced Materials Research, Vols. 403-408, pp. 4199-4204, 2012

Online since:

November 2011




[1] G.M. Rebeize , RF MEMS, Theory, Design and Technology in circuit Theory and design MEMS , , John Wiley & Sons USA, (2003).

[2] W. Moseley, E. M. Yeatman , A. S. Holmes , R. R. A. Syms, A. P. Finlay , P. bonifac , Silicon low power, low voltage MEMS Switches for space communication system, 19th IEEE International Conference, (2006).

DOI: 10.1109/memsys.2006.1627940

[3] Katehi, L. P. B. , Harvey, J. F. and Brown, E. (2002). MEMS and Micromachined circuits for High Frequency Applications, IEEE MTT, Vol. 50, NO. 3, PP 858-866.

DOI: 10.1109/22.989969

[4] Sharif Sedky, Post-processing Techniques for Integrated MEMS, Artech House, Massachusetts, (2006).

[5] Chang liu, Foundation of MEMS, Illinoise ECE Series, Dearson Prentice Hall, Newjersy, (2006).

[6] H. J. De Los Santos , Introduction to Microelectromechanical (MEM) Microwave Systems, Artech. House , Boston-London (1999).

[7] C. Kugeler, A. Henning, U. Buttger, and R. Waser, An integrated Microelectromechanical Microwave switch based on piezoelectric actuation, jornal of Electroceramics , vol. 22. no 1-3, pp.145-149, Feb(2009).

DOI: 10.1007/s10832-008-9457-7

[8] D. Christopher, M. Baber ,G. M. Kraus, D. A. Czaplewski, and G. A. Patrizi, Poly-silicon Based latching RF MEMS Switch, IEEE Microw Commun. Lett(2009).

DOI: 10.1109/lmwc.2009.2020025

[9] R. Marcelli, G. Bartolucci, G. Papaioaanu, G. De Angelis, A. Lucibello, E. Proietti, B. Margesin, F. Giacomozzi, F. Deborgies, Reliability of RF MEMS Switches due to Charging effect and their circuited Modeling, Symposium on Design , Test , Integration and Packaging of MEMS/MOEMS(DTIP), Italy , April (2009).

DOI: 10.1109/dtip.2014.7056678

[10] K. Y. Chan, R. Ramer , RF MEMS Swith with low stress Sensitivity and low Actuation Voltage , IEEE International Symposium on Antennas an propagation and USNC/URSI National Radio Science meeting, chaleston SCUSA, June (2009).

DOI: 10.1109/aps.2009.5172136

[11] Y. Mofinejad, A. Z. Kouzani , K. Mofinezhad, D. Izadi, Design an simulation of a RF MEMS Shunt Switch for Ka and V band and the impact of varying its geometrical parameter, MWSCAS, 52nd, IEEE International Midwest Symposium on circuits and system , pp.823-826, (2009).

DOI: 10.1109/mwscas.2009.5235895

[12] S. Touti, N. Lorphelin , A. Kanciurzewski, R. Robin, A. S. Rollier, O. Millet, K. Sequeni, low actuation voltage totally free flexible RF MEMS switch with antistiction System, Symposium on Design, Test, Integration and Packaging of MEMS / MOM(DTIP 2008). Pp, 66-77, france April (2008).

DOI: 10.1109/dtip.2008.4752954

[13] J. E. Shigley and L. D. Mitchell, Mchanical Engineering Design Mc Graw-Hill, 4th ed., (1983).

Fetching data from Crossref.
This may take some time to load.