Design & Simulation of Low Loss 5-Bit Ku Band Switched Line MEMS Phase Shifter on Gaas


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As the requirement for the low loss phase shifter increases, so does the development of RF MEMS as a solution. This paper presents the design & simulation of Switched line MEMS phase shifter for Ku band using GaAs substrate. The phase shift can be achieved by varying the lengths in delay path to the reference path for the same phase velocity. The electromagnetic & electromechanical simulations were carried out with various structural parameters to optimize the design. The novelties like low insertion loss, low actuation voltage with distributed actuation pads for DC and RF are used to make the design unique. The EM simulations are carried out using 3D simulator HFSS and a phase shift of 172.6 deg./dB for a total Phase shift of 348.75deg was achieved with return loss of 15.5dB over a frequency band from 16-18 GHz and a phase shift error less than ±2 degree in the 32 states. The electromechanical simulations are carried to achieve the low actuation voltage of 15.3V. These parameters make these suitable for the Phased array applications [1, 2].



Advanced Materials Research (Volumes 403-408)

Edited by:

Li Yuan






A. K. Sharma et al., "Design & Simulation of Low Loss 5-Bit Ku Band Switched Line MEMS Phase Shifter on Gaas", Advanced Materials Research, Vols. 403-408, pp. 5330-5334, 2012

Online since:

November 2011




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