Effect of Annealing Temperature on the Properties of Silicon Crystal


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In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.



Advanced Materials Research (Volumes 415-417)

Edited by:

Jinglong Bu, Zhengyi Jiang and Sihai Jiao




Q. Y. Hao et al., "Effect of Annealing Temperature on the Properties of Silicon Crystal", Advanced Materials Research, Vols. 415-417, pp. 1323-1326, 2012

Online since:

December 2011




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