Effect of Substrate Temperature on High Rate Deposited ZnO:Al Films by Magnetron Sputtering

Abstract:

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A series of ZnO:Al (AZO) thin films was prepared on quartz at different substrate temperature using magnetron sputtering with high deposited rate of 67 nm/min. The structural, electrical and optical properties of these films were investigated as a function of substrate deposition temperature ranging from room temperature to 500 °C. The surface micrograph of AZO film deposited at room temperature was measured by a scanning electron microscope (SEM) and an atomic force microscope (AFM). The results of X-ray diffraction (XRD) test show that all the films have a (002) preferential orientation. The best electrical property was obtained at 500 °C, the resistivity was 9.044×10-4 ohm•cm, and the corresponding carrier concentration and mobility were 3.379×1020 /cm3 and 20.45 m2/Ns, respectively. What's more, all the films show a high optical transmittance.

Info:

Periodical:

Advanced Materials Research (Volumes 430-432)

Edited by:

Ran Chen, Dongye Sun and Wen-Pei Sung

Pages:

480-483

DOI:

10.4028/www.scientific.net/AMR.430-432.480

Citation:

W. M. Li and H. Y. Hao, "Effect of Substrate Temperature on High Rate Deposited ZnO:Al Films by Magnetron Sputtering", Advanced Materials Research, Vols. 430-432, pp. 480-483, 2012

Online since:

January 2012

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Price:

$35.00

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