Thin CuInSi Film Deposited by Magnetron Co-Sputtering

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Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

Info:

Periodical:

Advanced Materials Research (Volumes 433-440)

Edited by:

Cai Suo Zhang

Pages:

302-305

Citation:

J. S. Xie et al., "Thin CuInSi Film Deposited by Magnetron Co-Sputtering", Advanced Materials Research, Vols. 433-440, pp. 302-305, 2012

Online since:

January 2012

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$38.00

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