Non-stoichiometric titanium dioxide (TiO2-x) thin films were obtained by unbalanced reactive pulsed magnetron sputtering and subsequently modified by hydrogen plasma. To investigate the influence of hydrogen plasma on the properties of the films, time and temperature were changed during the process with a fixed vacuum pressure of 10 Pa. The film structure, composition, resistance and blood compatibility were studied. The results that the concentration of Ti4+ decreases with the increasing of treated time and substrate temperature, which results in existence of oxygen vacancy and increase of conductivity. It is found that Ti-O film treated in 110°C plasma for 15min represents the lowest thrombosis risks, which could be mainly attributed to its characteristic of n-type semiconductor caused by appropriate oxygen vacancy forming in hydrogen plasma treatment.