Mechanical Mechanisms of Chemical Mechanical Polishing

Abstract:

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This paper describes a mechanical mechanism of chemical mechanical polishing (CMP) and the model is applied to the polishing of silicon substrates by polyurethane pads and slurries containing fumed silica as is typically done in the manufacture of integrated circuits. The model utilizes the concept that the polishing pad surface contains asperities that support the normal load on the wafer, and that friction and hydrodynamic forces influence wear. The interfacial fluid pressure can significantly influence the normal pressures on the wafers and its effects modify the wear rate predictions.

Info:

Periodical:

Advanced Materials Research (Volumes 47-50)

Edited by:

Alan K.T. Lau, J. Lu, Vijay K. Varadan, F.K. Chang, J.P. Tu and P.M. Lam

Pages:

1486-1489

DOI:

10.4028/www.scientific.net/AMR.47-50.1486

Citation:

S. Danyluk and S. H. Ng, "Mechanical Mechanisms of Chemical Mechanical Polishing", Advanced Materials Research, Vols. 47-50, pp. 1486-1489, 2008

Online since:

June 2008

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Price:

$35.00

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