Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

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The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

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Periodical:

Advanced Materials Research (Volumes 516-517)

Edited by:

Jinyue Yan, Charles C. Zhou, Rutang Liao and Jianwen Wang

Pages:

1945-1948

Citation:

M. K. Lee et al., "Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas", Advanced Materials Research, Vols. 516-517, pp. 1945-1948, 2012

Online since:

May 2012

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$38.00

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