Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas
The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.
Jinyue Yan, Charles C. Zhou, Rutang Liao and Jianwen Wang
M. K. Lee et al., "Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas", Advanced Materials Research, Vols. 516-517, pp. 1945-1948, 2012