Synthesis of Source Powder for SiC Crystal Growth Using High Purity Silicon and Carbon Powder
This work focused on the synthesis of source powder for SiC crystal growth. SiC powder was prepared using high purity silicon and carbon powder. Broad ranges of temperature and Ar pressure were studied on the property of the as-prepared powder. X-ray diffraction (XRD) results show that SiC polytypes were determined by synthesis temperature, while not related to the variation of Ar pressure. The lattice constant of SiC would expand when Ar pressure decreased. Raman results revealed that the variation of Ar pressure would influence SiC crystallization. It was found that the concentrations of free C, free Si and nitrogen all varied with the variation of temperature or Ar pressure.
Kexiang Wei and Yuhang Yang
H. Wang et al., "Synthesis of Source Powder for SiC Crystal Growth Using High Purity Silicon and Carbon Powder", Advanced Materials Research, Vol. 529, pp. 64-68, 2012