A Venation-Like Groove Structure of Vertical GaN-Based Light-Emitting-Diode Analyzed by the Monte Carlo Photon-Tracing Method


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A venation-like groove structure (VGS) is proposed to improve light extraction efficiency (LEE) of vertical GaN-based light-emitting-diode by reshaping the undoped GaN (U-GaN) layer. The light extraction characteristics of the venation-like groove structure are simulated and compared to the same electrode structure without grooves by the Monte Carlo photon-tracing method. It is found that VGS has a 20.3% enhancement on LEE at the chip size of 300 μm × 300 μm. The simulated LEE distribution pattern shows that VGS has advantages in brightness and uniformity compared to interdigitated-multi-fingered and square groove structures. These advantages are contributed to the partition and deformation in VGS.



Edited by:

Kexiang Wei and Yuhang Yang




T. Hong and J. Y. Kang, "A Venation-Like Groove Structure of Vertical GaN-Based Light-Emitting-Diode Analyzed by the Monte Carlo Photon-Tracing Method", Advanced Materials Research, Vol. 529, pp. 96-99, 2012

Online since:

June 2012




[1] Murai A, Thompson DB, Masui H et al (2006) Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding. Appl. Phys. Lett. 89, 171116-1 - 171116-3.

DOI: 10.1063/1.2364065

[2] Park EH, Ferguson IT, Jeon SK et al (2006) InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface. Appl. Phys. Lett. 89, 251106-1 - 251106-3 (2006).

DOI: 10.1063/1.2410229

[3] Cho HK, Jang J, Choi JH et al (2006) Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes. Opt. Express. 14, 8654-8660.

DOI: 10.1364/oe.14.008654

[4] Windisch R, Rooman C, Meinlschmidt S et al (2001) Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes. Appl. Phys. Lett. 79, 2135-2137.

DOI: 10.1063/1.1397758

[5] Ting DZ, McGill TC (1995) Monte Carlo simulation of light-emitting diode light extraction characteristics. Opt. Eng. 34, 3545-3553.

DOI: 10.1117/12.215485

[6] Lee SJ (2005) Analysis of light-emitting diodes by Monte Carlo photon simulation. Appl. Opt. 40, 1427-1437.

DOI: 10.1364/ao.40.001427

[7] Tan BS, Yuan S, Kang XJ (2004) Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate. Appl. Phys. Lett. 84, 2757-2759.

DOI: 10.1063/1.1704862

[8] Kang XN, Zhang B, Hu CY et al (2006) Ohmic contact of high reflectivity on p-Type GaN Chinese Journal of Luminescence. J. Chin. Lumin. 27, 75-79.

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