A Venation-Like Groove Structure of Vertical GaN-Based Light-Emitting-Diode Analyzed by the Monte Carlo Photon-Tracing Method


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A venation-like groove structure (VGS) is proposed to improve light extraction efficiency (LEE) of vertical GaN-based light-emitting-diode by reshaping the undoped GaN (U-GaN) layer. The light extraction characteristics of the venation-like groove structure are simulated and compared to the same electrode structure without grooves by the Monte Carlo photon-tracing method. It is found that VGS has a 20.3% enhancement on LEE at the chip size of 300 μm × 300 μm. The simulated LEE distribution pattern shows that VGS has advantages in brightness and uniformity compared to interdigitated-multi-fingered and square groove structures. These advantages are contributed to the partition and deformation in VGS.



Edited by:

Kexiang Wei and Yuhang Yang




T. Hong and J. Y. Kang, "A Venation-Like Groove Structure of Vertical GaN-Based Light-Emitting-Diode Analyzed by the Monte Carlo Photon-Tracing Method", Advanced Materials Research, Vol. 529, pp. 96-99, 2012

Online since:

June 2012




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