Characteristic of Si-Doped DLC Films on TC4 and Cr12 Substrates


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A series of diamond-like carbon (DLC) films with different Si concentration were prepared by changing the ratio of the number of Si-doped graphite target and pure graphite target. As the Si concentration in the thin film keep on increasing, the concentration of C-Si bond will increase leading to decrease of hardness and stress and increase of friction coefficient. In order to synthesize DLC films on metal substrates 3 types of interlayer have been made. The first and second interlayer is made up Ti/TiCx, and the second is thicker, the third interlayer is made up Ti/TiNx/TiNxCy, with the same thickness of the second. We also prepared DLC films with 6.7 at.% Si concentration on TC4 and Cr12 substrates with the third interlayer, and the thickness, hardness and fiction coefficients is about 0.652m, 4200Hv and 0.15, respectively. The adhesion of films had been greatly strengthened with a proper interlayer, and the value is more than 39N/mm2



Advanced Materials Research (Volumes 53-54)

Edited by:

Shengqiang Yang, Shichun Yang and Hang Gao




D. C. Zhao et al., "Characteristic of Si-Doped DLC Films on TC4 and Cr12 Substrates", Advanced Materials Research, Vols. 53-54, pp. 343-348, 2008

Online since:

July 2008