Thermal Conductivity of SOI LDMOS Device


Article Preview

In this paper, the thermal conductivity of lateral double diffused metal oxide semiconductor (LDMOS) was studied. In order to optimize their properties, the LDMOS device based on the lower surface of field (RESURF) theory join the second field plate technology. Power device self-heating effect will affect the carrier mobility, making its negative resistance effect in IV characteristic curve under the high-power condition. As the thermal conductivity of SiO2 is low, the self-heating effect of SOI device is more obvious. The simulation using Silvaco -TCAD software for different buried oxide (BOX) with different SOI layer thickness accordingly show that the thicker SOI layer and the thinner buried oxide layer, the smaller the self-heating effect.



Edited by:

J.Y. Liang and D.G. Li




Y. Xiong and Y. S. Lai, "Thermal Conductivity of SOI LDMOS Device", Advanced Materials Research, Vol. 571, pp. 8-12, 2012

Online since:

September 2012





[1] van der Pol, J.A., Ludikhuize, A.W., Huizing, H.G.A., van Velzen, B., Hueting, R.J.E., Mom, J.F., van Lijnschoten, G., Hessels, G.J.J., Hooghoudt, E.F., van Huizen, R., Swanenberg, M.J., Egbers, J.H.H.A., van den Elshout, F., Koning, J.J., Schligtenhorst, H., and Soeteman, J. A-BCD: An economic 100V RESURF silicon-on-insulator BCD technology for consumer and automotive applications", . Proc. ISPSD, 00, Toulouse, France, 2000, p.327.


[2] Anghel, C., Hefyene, N., Ionescu, A.M., Vermandel, M., Bakeroot, B., Doutreloigne, J., Gillon, R., Frere, S. , Maier, C. and Mourier, Y. Investigations and physical modelling saturation effects in lateral DMOS transistor architectures based on the concept of intrinsic drain voltage,. Proc. ESSDERC, Nuremberg, Germany, 2001, p.339.


[3] Bawedin, M., Reanux, C., and Flandre, D.: LDMOS in SOI technology with very thin silicon film, Solid-State Electron., 2004, 48, p.2263–2270.


[4] Zhu, L., Vafai, K., and Xu, L., Device temperature and heat generation in power metal-oxide semiconductor field effect transistor, J. Thermophys. Heat Trans., 1999, 13, p.185–19.

[5] Roig, J., Flores, D., Hidalgo, S., Vellvehi, M., Cortes, I., and Rebollo, J, A linear heat generation thermal model for LDMOS basic cell self-heating analysis in transient state,. Proc. THERMINIC, Aix-en-Provence, France, 2003, p.139–142.

[6] Ying-Keung Leung, Yuji Suzukit, Kenneth E. Goodsod and S. Simon Wong, Self-Heating Effect in Lateral DMOS on SO1, Intemational Symposium on Power Semiconductor Devices & ICs, 1995P.G. Clem, M. Rodriguez, J.A. Voigt and C.S. Ashley, U.S. Patent 6, 231, 666. (2001).

Fetching data from Crossref.
This may take some time to load.