Influence of Different Buffer Layer on Intense Pulsed Field Emission of Carbon Nanotubes


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In order to study influence of buffer layer on intense pulsed field emission (IPFE) of carbon nanotube films (CNTs), CNTs were synthesized on Si substrate with different buffer by pyrolysis of iron phthalocyanine (FePc). The buffer layer including Ni and Au/Ni were prepared by using electroless plating process. The surface morphologies of the films were characterized by field emission scanning electron microscopy (SEM). IPFE properties of CNTs were measured with a diode structure in single-pulse mode. It was found that the emission ability of CNTs were improved obviously by introducing buffer layer,and Au were better than Ni as buffer layer. At the same peak electric field intensity ~11.4 V/µm, The even turn-on field decreased from 6.7V/µm for Si- CNTs to 5.9 V/µm for Ni- CNTs to 4.6V/µm for Au- CNTs (the CNTs synthesized on Si substrate with Au/Ni buffer,Ni buffer and without buffer was abbreviated as Au-CNTs , Ni- CNTs,Si-CNTs, respectively) , and the peak emission current increased from 90A for Si- CNTs to 180A for Ni- CNTs to 260A for Au- CNTs.



Edited by:

Junqiao Xiong




H. L. Ma et al., "Influence of Different Buffer Layer on Intense Pulsed Field Emission of Carbon Nanotubes", Advanced Materials Research, Vol. 586, pp. 130-134, 2012

Online since:

November 2012




[1] S. Iijima, Helical microtubules of graphitic carbon , Nature, 354(1991), 56-58.


[2] D.J. Yang, S.G. Wang, Q. Zhang P.J. Sellin, G. Chen, Thermal and electrical transport in multiwalled carbon nanotubes, Phy. Lett. A, 329(2004) 207-213.

[3] J.P. Novak, M.D. Lay, F.K. Perkins, E.S. Snow, Macroelectronic applications of carbon nanotube networks, Solid-State Ele, 48(2004) 1753-1756.


[4] K. Tsukagoshi, N. Yoneya, S. Uryu, Y. Aoyagi, A. Kanda, Y. Ootuka, B. W. Alphenaar, Carbon nanotube devices for nanoelectronics, Phy. B: Condensed Matter, 323(2002) 107-114.


[5] A.M. Fennimore: Rotational actuators basedon carbon nanotubes, Nature, 424(2007)408-410.

[6] K. Kawakita, K. Hata, H. Sato, Y. Saito, Development of microfocused X-ray source by using carbon nanotuhe field emitter, J Vac Sci Technol B, 24(2006)950-952.


[7] K.B.K. Teo, E. Minoux, L. Hudanski, F. Peauger, J.P. Schnell, L. Gangloff, P. Legagneux, D. Dieumegard, G.A.J. Amaratunga, W.I. Milne, Microwave devices: carbon nanotubes as cold cathodes, Nature, 437(2005)968-969.


[8] J.M. Bonard, K.A. Dean, B.F. Coll, C. Klinke, Field emissi on of individual carbon nanotubes in the scanning electron microscope, Phys Rev Lett , 89(2002) 7602-7605.


[9] R. Seelaboyina, J. Huang, W.B. Choi, Enhanced field emission of thin multiwall carbon nanotubes by electron multiplication from microchannel plate, Appl Phys Lett, 88(2006): 194104-194106.


[10] Liao QL, Zhang Y, Xia LS, et al. High intensity, pulsed electron beam emission from carbon nanotube cathodes. Carbon, 2007; 45(7): 1471-1475.


[11] F.G. Zeng, X. LI, S. Zuo, L.S. Xia, Y. Chen, X.G. Liu, H. zhang, R. Zhang, Characteristics of intensity pulsed electron emission from Carbon nanotube film grown on Silicon substrate by pyrolysis of FePc, Journal of Functional materials, 2011, 42(4): 609-611.

[12] D.C. Li, L.M. Dai, S.M. Huang, A.W.H. Mau Z.L. Wang, Structure and growth of aligned carbon nanotube films by Pyrolysis, Chem Phys Lett, 316(2000)349-355.


[13] J.H. Han, T.Y. Lee, D.Y. Kim, J.B. Yoo, C.Y. Park, High field-emission current of carbon nanotubes grown on TiN-coated Ta substrate for electron emitters in a microwave power amplifier,J. Vac. Sci. Technol. B, 22(2004)1636-1642.


[14] Y. Cheng, O. Zhou, Electron field emission from carbon nanotubes,C.R. Phys, 2003, 4(2003)1021-1033.

[14] Y. Cheng, O. Zhou, Electron field emission from carbon nanotubes,C.R. Phys, 2003, 4(2003)1021-1033.