Fabrication and Sensing Properties of PSZT Thin Films for Micro-Force Sensors
Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films have been fabricated on Pt/Ti/SiO2/Si substrate by a sol–gel method combined with a rapid thermal annealing process. The microstructure analysis of the thin films showed that the orientation ratio of (111) was 0.304，0.475 and 0.849 with x=0, 0.03, 0.08. The dielectric measurement suggested that the addition of Sr in Pb(Zr0.53Ti0.47) O3(PZT) thin films greatly improved the dielectric properties of PZT thin films. The dielectric constant for PZT thin films at a frequency of 2 kHz was 648，which was increased to 1239 when 3%at Sr was doped. Meanwhile, the dissipation factor was only increased from 0.02 to 0.03. Three kinds of piezoelectric micro-sensors have been prepared based on PSZT thin films and the sensing sensitivity of 0.017pc/uN, 0.033pc/uN, and 0.011pc/uN were realized as x increased, respectively. It indicated that micro-sensors with PSZT0.03 thin films showed better sensing property than other two.
Y. Cui et al., "Fabrication and Sensing Properties of PSZT Thin Films for Micro-Force Sensors ", Advanced Materials Research, Vols. 60-61, pp. 246-250, 2009