Enhancement of Thermopower due to Deficiency of Sb in FeSb2


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FeSb2 was recently found to be a narrow-gap semiconductor with strong electronelectron correlation and a large thermopower at low temperatures. We report measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity between 5 K to 300 K on polycrystalline samples of FeSb2 and FeSb1.9. We found that the deficiency of Sb in the parent compound leads to a giant anomalous peak in thermopower (S) at low temperatures, reaching ~ 426 μV/K at 20 K, resulting in a high thermoelectric power factor at low temperatures, achieving 10 μW/K2m at 27 K.. Consequently, a significantly enhanced thermoelectric figure of merit ZT ~ 0.0015 is achieved near room temperature. At low temperatures there is no improvement in ZT values due to the high thermal conductivity (phonon dominant region). Keywords: Seebeck coefficient, thermal conductivity, resistivity, thermoelectric figure of merit. PACS: 72.20.Pa, 71.27.+a, 71.28.+d



Edited by:

Prafulla K. Jha, Arun Pratap and Ashvin R.Jani




A. V. Sanchela et al., "Enhancement of Thermopower due to Deficiency of Sb in FeSb2", Advanced Materials Research, Vol. 665, pp. 179-181, 2013

Online since:

February 2013




[1] A. Bentien, S. Johnsen, G. K. H. Madsen, B. B. Iversen, F. Steglich, Eur. Phys. Lett. 2007, 80, 17008.

[2] P. Sun, M. Søndergaard, Y. Sun, S. Johnsen, B. B. Iversen, F. Steglich, Appl. Phys. Lett. 2011, 98, 072105.

[3] Lukoyanov A V et al: 2006 Eur. Phys. J. B 53 205.

[4] J. Xie et al, Mat. Lett. 57, 4673 (2003).

[5] P. Sun, N. Oeschler, S. Johnsen, B.B. Iversen, and F. Steglich: Narrow band gap and enhanced thermoelectricity in FeSb2. Dalton Trans. 39, (2010).

DOI: https://doi.org/10.1039/b918909b

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