Effect of Pd Nanocrystals on Resistive Switching Characteristics in HfOx Memory Devices

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For resistive random access memory (RRAM), there is an important issue about variations of switching characteristics such as set/reset voltage of resistance state. The variations may result in an incorrect reading operation. Another issue is device yield, which determine whether fabricated memory can be applied in commercial product. We investigated the switching performance of HfOx metal oxide as a resistive switching layer embedded with and without Pd metal nanocrystals. Compared with Pd/HfOx/TiN structure, the memory embedded with Pd metal nanocrystals (Pd/Pd embedded HfOx/TiN) shows high yield, better electrical uniformity and reliability for the flexible electronics application.

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Edited by:

Brendan Gan, Y. Gan and Y. Yu

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3-6

Citation:

T. K. Kang et al., "Effect of Pd Nanocrystals on Resistive Switching Characteristics in HfOx Memory Devices", Advanced Materials Research, Vol. 684, pp. 3-6, 2013

Online since:

April 2013

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$38.00

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