Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements


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Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.



Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang






S. Faraz et al., "Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements", Advanced Materials Research, Vols. 79-82, pp. 1317-1320, 2009

Online since:

August 2009




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