Fabrication and Optical Properties of Mn-Doped ZnO Nanowires
Mn-doped ZnO nanowires were successfully synthesized on silicon substrate by chemical vapor deposition method with Au catalyst. The X-ray diffraction (XRD) pattern indicates that the Mn-doped ZnO nanowires are hexagonal wurtzite structure and no second phase. The X-ray spectroscopy (EDX) and X-ray photoelectron spectrum (XPS) spectra exhibited the Mn ions were induced into the ZnO nanowires. Photoluminescence (PL) spectra were excited by 325 nm Xe lamp laser. Three peaks are observed in Mn-doped ZnO nanowires, two ultraviolet (UV) emissions at 370 nm and 386 nm, a visible emission at 405 nm. The emission at 405 nm is first found in Mn-doped ZnO nanowires that attributed to the electron transition from bottom of the conduction band to zinc vacancy defect energy level. The existence of Mn element changes the optical property of the ZnO nanowires.
Yansheng Yin and Xin Wang
J. Wang et al., "Fabrication and Optical Properties of Mn-Doped ZnO Nanowires", Advanced Materials Research, Vols. 79-82, pp. 453-456, 2009