Structural and Optoelectronic Properties of Single Crystalline SnO2:Ga Films Deposited on α-Al2O3 (0001) by MOCVD


Article Preview

12% Gallium-doped tin oxide (SnO2:Ga) single crystalline films have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The grown temperatures were varied from 400 to 600°C. According to XRD patterns, the film deposited at 500°C has the best single crystalline structure. Subsequently, 3 to 15% doped films were fabricated at 500°C using the same method, except that Gallium organometallic (OM) source was injected in pulsed-mode for the 3, 5 and 10% -doped films. Then, structural and optoelectronic properties of the films were investigated in detail. The obtained films all have the rutile structure of pure SnO2. Film with resistivity of 1.09×10−2Ω cm, carrier concentration of 8.86×1019cm−3 and Hall mobility of 6.49cm2 v−1 s−1 was obtained at 5% of Ga concentration. The average transmittance for the SnO2:Ga films in the visible range were over 90%.



Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang




X. A. Pei et al., "Structural and Optoelectronic Properties of Single Crystalline SnO2:Ga Films Deposited on α-Al2O3 (0001) by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 763-766, 2009

Online since:

August 2009





[1] M. Sawada, M. Higuchi, Thin Solid Films 317 (1998) 157-160.

[2] H.Y. Valencia, L.C. Moreno, A.M. Ardila, Microelectronics Journal 39 (2008) 1356-1357.

[3] J. Du, ZH.G. Ji, ACTA PHYSICA SINICA, Vol. 56, No. 4, April, (2007).

[4] C. Matei Ghimbeu, R.C. van Landschoot , J. Schoonman, M. Lumbreras, Journal of the European Ceramic Society 27 (2007) 207-213.

[5] R. Khandelwal, A.P. Singh, A. Kapoor, S. Grigorescu, P. Miglietta, N.E. Stankova, A. Perrone, Optics & Laser Technology 41 (2009) 89- 93.


[6] S.Q. ZHAO, Y.L. ZHOU, Sh.F. WANG, K. ZHAO, and P. HAN, RARE METALS Vol. 25, No. 6, Dec 2006, p.693.

[7] Ogawa H, Nishikawa M, Abe A. J Appl Phys 1982; 53: 4448.

[8] Katti VR, Debnath AK, Muthe KP, Kaur M, Dua AK, Gadkari SC, et al. Sensors Actuators B 2003; 96: 245.

[9] Mandayo GG, Castano E, Gracia FJ, Cirera A, Cornet A, Morante JR. Sensors Actuators B 2003; 95: 90.

[10] Dieguez A., RomaneRodn'. guez A., Morante J.R., Kappler J., Barsan N., and Gopel W., Sens. Actuators B, 1999, 60 (1): 125.

[11] M. Passlack, E. F. Schubert, W. S. Hobson, M. Hong, N. Moriya, S. N. G. Chu, K. Konstadinidis, J. P. Mannaerts, M. L. Schnoes, and G. J. Zydzike, Appl. Phys. 77 (2), 15 January (1995).

Fetching data from Crossref.
This may take some time to load.