Structural and Optoelectronic Properties of Single Crystalline SnO2:Ga Films Deposited on α-Al2O3 (0001) by MOCVD

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12% Gallium-doped tin oxide (SnO2:Ga) single crystalline films have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The grown temperatures were varied from 400 to 600°C. According to XRD patterns, the film deposited at 500°C has the best single crystalline structure. Subsequently, 3 to 15% doped films were fabricated at 500°C using the same method, except that Gallium organometallic (OM) source was injected in pulsed-mode for the 3, 5 and 10% -doped films. Then, structural and optoelectronic properties of the films were investigated in detail. The obtained films all have the rutile structure of pure SnO2. Film with resistivity of 1.09×10−2Ω cm, carrier concentration of 8.86×1019cm−3 and Hall mobility of 6.49cm2 v−1 s−1 was obtained at 5% of Ga concentration. The average transmittance for the SnO2:Ga films in the visible range were over 90%.

Info:

Periodical:

Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang

Pages:

763-766

DOI:

10.4028/www.scientific.net/AMR.79-82.763

Citation:

X. A. Pei et al., "Structural and Optoelectronic Properties of Single Crystalline SnO2:Ga Films Deposited on α-Al2O3 (0001) by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 763-766, 2009

Online since:

August 2009

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$35.00

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