Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon


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Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.



Edited by:

Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre






V.G. Litovchenko et al., "Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon", Advanced Materials Research, Vol. 854, pp. 141-145, 2014

Online since:

November 2013




[1] International Technology Roadmap for Semiconductors (2012).

[2] D. Kruger, H. Rucker, B. Heinemann, V. Melnik, R. Kurps, D. Bolze, J. Vac. Sci. Technol. 22 (2004) 455.

[3] H. Rucker, B. Heinemann, R. Barth, D. Bolze, V. Melnik, R. Kurps, and D. Kruger, Appl. Phys. Lett. 82 (2003) 826.

[4] A. Ural, P. Griffin, J. Plummer, J. Appl. Phys. 85 (1999) 640.

[5] S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, V. Soncini, J. Appl. Phys. 94 (2003) 4950.

DOI: 10.1063/1.1609640

[6] K. Shibahara, H. Furumoto, K. Egusa, M. Koh, S. Yokohama, Mat. Res. Soc. Symp. Proc. № 532 (1998) 23.

[7] H. Shirai, A. Yamaguchi, F. Shimura, Appl. Phys. Lett. 54 (1996) 1748.

[8] R. Falster, G.R. Fisher, G. Ferrero, Appl. Phys. Lett. 59 (1991) 809.

[9] T.J. Magee, C. Leung, H. Kawayoshi, L.J. Palkuti, B.K. Furman, C.A. Evans, L.A. Christel, J.F. Gibbons, and D.S. Day, Appl. Phys. Lett. 39 (1981) 564.

DOI: 10.1063/1.92795

[10] Y. Zhao, D. Li, X. Ma, D. Yang, J. Phys.: Condens. Matter 16, 1539 (2004).

[11] I.J.R. Baumvol, F.C. Stedile, S. Rigo, J.J. Ganem, and I. Trimaille, Braz. J. Phys. 24 (1994) 529.

[12] M. Tamura, Y. Hiroyama, A. Nishida, 1998 International Conference on Ion Implantation Technology Proceedings 2, (1999) 744.

[13] G. -H. Lu, Q. Wang, F. Liu, Appl. Phys. Lett. 92 (2008) 211906.

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