Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

Abstract:

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Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.

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Periodical:

Edited by:

Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre

Pages:

141-145

DOI:

10.4028/www.scientific.net/AMR.854.141

Citation:

V.G. Litovchenko et al., "Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon", Advanced Materials Research, Vol. 854, pp. 141-145, 2014

Online since:

November 2013

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$35.00

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