Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon
Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.
Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre
V.G. Litovchenko et al., "Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon", Advanced Materials Research, Vol. 854, pp. 141-145, 2014