Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates

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Recently, magnetic tunnel junction (MTJ)-based implication logic gates have been proposed to realize a fundamental Boolean logic operation called material implication (IMP). For given MTJ characteristics, the IMP gate circuit parameters must be optimized to obtain the minimum IMP error probability. In this work we present the optimization method and investigate the effect of MTJ device parameters on the reliability of IMP logic gates. It is shown that the most important MTJ device parameters are the tunnel magnetoresistance (TMR) ratio and the thermal stability factor Δ. The IMP error probability decreases exponentially with increasing TMR and Δ.

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Periodical:

Edited by:

Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre

Pages:

89-95

DOI:

10.4028/www.scientific.net/AMR.854.89

Citation:

H. Mahmoudi et al., "Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates", Advanced Materials Research, Vol. 854, pp. 89-95, 2014

Online since:

November 2013

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$35.00

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