Dislocation Self-Organization Processes in Silicon during High-Temperature Oxidization


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The dislocation self-organization processes in near-surface silicon layers of Si-SiO2 during high temperature oxidization have been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. We have proposed the defect formation mechanism of near-surface layers in Si-SiO2 structure. For self-organization processes to be explained, the synergetic method was applied. It was shown that the formation of periodical dislocation structures at the interface is a consequence of the spatial instability of the dislocation distribution in the crystal, their self-organization due to correlation effects between the oxygen diffusing along structural defects and an ensemble of dislocations.



Advanced Materials Research (Volumes 875-877)

Edited by:

Duanling Li, Dawei Zheng and Jun Shi






I. Iatsunskyi "Dislocation Self-Organization Processes in Silicon during High-Temperature Oxidization", Advanced Materials Research, Vols. 875-877, pp. 792-796, 2014

Online since:

February 2014





[1] V.A. Smyntyna, O.A. Kulinich, M.A. Glauberman, O.V. Sviridova and I.R. Iatsunskyi: Physics and Chemistry of Solid State 12 (2011), p.95.

[2] I.R. Yatsunskiy and O.A. Kulinich: Semiconductor Physics, Quantum Electronics and Optoelectronics 13 (2010). p.418.

[3] O.A. Kulinich: Russian Physics Journal 49 (2006), p.233.

[4] K.V. Ravi: Imperfections and impurities in semiconductor silicon (NY: Wiley 1981).

[5] Matare: Defect electronics in semiconductors (NY: Wiley 1971).

[6] O.A. Kulinich and M.A. Glauberman: Russian Physics Journal 47 (2004), p.1268.

[7] A. Katsnelson and A. Olemskoi: Microscopic Theory of nonhomogeneous structures (Amer Inst of Physics 1990).

[8] A. Olemskoi: Theory of structure in nonequilibrium Condensed Matter (NY: Nova Science 1999).

[9] G.A. Malygin: Physics-Uspekhi 42 (1999), p.887.

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