Strain Measurement with Nanometre Resolution by Transmission Electron Microscopy


Article Preview

Strain is routinely used in state-of-the-art semiconductor devices in order to improve their electrical performance. Here we present experimental strain measurements obtained by different transmission electron microscopy (TEM) based techniques. Dark field electron holography, nanobeam electron diffraction (NBED) and high angle annular dark field scanning electron microscopy (HAADF STEM) are demonstrated. In this paper we demonstrate the spatial resolution and sensitivity of these different techniques on a simple calibration specimen where the accuracy of the measurement can easily be assessed.



Main Theme:

Edited by:

M. François, G. Montay, B. Panicaud, D. Retraint and E. Rouhaud






D. Cooper and J. L. Rouviere, "Strain Measurement with Nanometre Resolution by Transmission Electron Microscopy", Advanced Materials Research, Vol. 996, pp. 3-7, 2014

Online since:

August 2014


* - Corresponding Author

[1] M. Hytch et al, Nanoscale holographic interferometry for strain measurements in electronic devices. Nature 453 (2008) 1086.

[2] K. Usada et al, Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nanobeam electron diffraction (NBD). Mat. Sci. Eng. B. 124 (2005) 143.

[3] M. Hytch et al, Measurement of the displacement field of dislocations to 0. 03 Å by electron microscopy. Ultramicroscopy 74 (1998) 131.

[4] D. Cooper et al, Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution. Appl. Phys. Lett., 95 (2009) 053501.

DOI: 10.1063/1.3196549

[5] A. Béché et al, Improved precision in strain measurement using nanobeam electron diffraction. Appl. Phys. Lett., 95 (2009) 123114.

DOI: 10.1063/1.3224886

[6] J-L. Rouviere et al, Improved strain precision with high spatial resolution using nanobeam precession electron diffraction. Appl. Phys. Lett., 103, (2013) 241913.

DOI: 10.1063/1.4829154

[7] D. Cooper et al, Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy. J. Appl. Phys. 112 (2012) 124505.

DOI: 10.1063/1.4767925

[8] D. Cooper et al, Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography. Appl. Phys. Lett., Applied Physics Letters 99 (2011) 261911.

DOI: 10.1063/1.3672194

In order to see related information, you need to Login.