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Advances in Science and Technology Vol. 51
Title:
Disclosing Materials at the Nanoscale
Subtitle:
CIMTEC 2006
Edited by:
P. VINCENZINI and G. MARLETTA
DOI:
ToC:
Paper Title Page
Abstract: New materials such as langasite and langanate crystals present some interesting
perspectives for acoustic wave devices due to strong piezoelectric coefficients and due to the
opportunity to work through a wide range of temperature. Theoretical formulations for temperature
coefficients and electromechanical coupling coefficients of resonators are given in the case of
thickness modes of vibration. Results are computed using two data sets of elastic, piezoelectric and
dielectric constants. Orientations of BAW microresonators which give zero frequency shift versus
temperature at 600°C are determined to serve as high temperature nanobalances.
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Abstract: Constraction and characteristics of sorption polymeric relative humidity sensors, sorption
SiOx microhumidity sensors, and condensation type (dew point) sensors are compared. The
characteristics of the sensors are examined in dew point range from -80 to +20oC. An integrated
multifunctional humidity sensor, for measurements in wide humidity range at different conditions is
developed. The sensors are intended for use in various branches of industry, and in scientific
researches.
197
Abstract: Nanotechnology is occurring simultaneously in almost every field with strong
interdisciplinary applications which have unique and important characteristics for potential novel
and high performance devices. Quantum dots grown by epitaxial self-assembly via Stranski-
Krastanov growth mode have many favorable properties for infrared sensing. Because of their very
small size and three-dimensional confinement, the electronic energy levels are quantized and
discrete. These quantum effects lead to a unique property, “phonon bottleneck”, which might enable
the high operating temperature of infrared sensing which usually requires cryogenic cooling. Here
we report a focal plane array (FPA) based on an epitaxial self-assembled quantum dot infrared
detector (QDIP). The device structure containing self-assembled In0.68Ga0.32As quantum dots with a
density around 3×1010 cm-2 was grown by low-pressure metalorganic chemical vapor deposition
(LP-MOCVD). Using different structures, we successfully developed QDIPs with a peak
photoresponse around 5 μm and 9 μm. High peak detectivities were achieved at 77 K from both
QDIPs. By stacking both device structures, we demonstrated a two-color QDIP whose peak
detection wavelength could be tuned from 5 μm to 9 μm by changing the bias. 256×256 detector
arrays based on 5 μm and 9 μm-QDIPs were fabricated with standard photolithography, dry etching
and hybridization to a read-out integrated circuit (ROIC). We demonstrated thermal imaging from
our FPAs based on QDIPs.
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