Influence of the Annealing on the Thermal Stability of Ge-Sb-Te Materials for Recording Devices
Phase change memory materials of Ge-Sb-Te system [(GeTe)m(Sb2Te3)n (m : n = 1:1; 1:2; 2:1)] were studied during thermal cycling by differential scanning calorimetry, and thermal properties were determined. Reproducible endothermic peak in the range of 390-415°C was revealed in Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, which may possibly influence on the kinetics and endurance of data reading processes in phase-change memory devices. The nature of this endothermic peak is discussed. It was shown that additional annealing of synthesized Ge2Sb2Te5 increase stability of structure and thermal properties of the material.
Pietro VINCENZINI, Vojislav V. MITIC, Alois LOIDL and Dino FIORANI
S. Kozyukhin and A. A. Sherchenkov, "Influence of the Annealing on the Thermal Stability of Ge-Sb-Te Materials for Recording Devices", Advances in Science and Technology, Vol. 67, pp. 22-27, 2010