Influence of the Annealing on the Thermal Stability of Ge-Sb-Te Materials for Recording Devices

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Phase change memory materials of Ge-Sb-Te system [(GeTe)m(Sb2Te3)n (m : n = 1:1; 1:2; 2:1)] were studied during thermal cycling by differential scanning calorimetry, and thermal properties were determined. Reproducible endothermic peak in the range of 390-415°C was revealed in Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, which may possibly influence on the kinetics and endurance of data reading processes in phase-change memory devices. The nature of this endothermic peak is discussed. It was shown that additional annealing of synthesized Ge2Sb2Te5 increase stability of structure and thermal properties of the material.

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Edited by:

Pietro VINCENZINI, Vojislav V. MITIC, Alois LOIDL and Dino FIORANI

Pages:

22-27

Citation:

S. Kozyukhin and A. A. Sherchenkov, "Influence of the Annealing on the Thermal Stability of Ge-Sb-Te Materials for Recording Devices", Advances in Science and Technology, Vol. 67, pp. 22-27, 2010

Online since:

October 2010

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$38.00

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