High-Temperature Transport Properties of Indium Added Cobalt-Antimonide Based Skutterudites Processed by Current Assisted Short-Term Sintering


Article Preview

For more than a decade, skutterudites such as cobalt antimonides have been widely studied as a promising thermoelectric (TE) material for high-temperature applications. High thermoelectric figure of merit (ZT) in this material system can be achieved by suitable doping or by filling the interstitial voids with guest atoms. One of the best improvements in ZT is reported when indium (In) is used as additive to cobalt-antimonide skutterudites, as has been done in this study. Compaction of the grinded powders was carried out by a current-assisted short-term sintering device, which significantly reduces the process time in comparison to conventional hot pressing. Phase homogeneity of the bulk material has been probed by X-ray powder diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDX). TE properties (i.e. electrical conductivity, Seebeck coefficient and thermal conductivity) have been analyzed in the temperature range from 300 K to 700 K. The functional homogeneity of the samples was screened by the Potential & Seebeck Microprobe (PSM). Adapted from these results the effect of indium addition to short-term sintered cobalt-antimonide based skutterudites with absence of impurity phases will be discussed.



Edited by:

Pietro VINCENZINI, Kunihito KOUMOTO, Nicola ROMEO and Mark MEHOS






A. Sesselmann et al., "High-Temperature Transport Properties of Indium Added Cobalt-Antimonide Based Skutterudites Processed by Current Assisted Short-Term Sintering", Advances in Science and Technology, Vol. 74, pp. 54-59, 2010

Online since:

October 2010




[1] Sales, B. C., Mandrus, D., Chakoumakos, B. C.; Keppens, V. & Thompson, J. R., Phys. Rev. B, 1997, 56, 15081-15089.

DOI: 10.1103/physrevb.56.15081

[2] Braun, D. J. & Jeitschko, W., Journal of Solid State Chemistry, 1980, 32, 357 - 363.

[3] Dyck, J. S.; Chen, W.; Uher, C.; Chen, L.; Tang, X.; Hirai, T., Journal of Applied Physics, AIP, 2002, 91, 3698-3705.

[4] Puyet, M.; Lenoir, B.; Dauscher, A.; Pécheur, P.; Bellouard, C.; Tobola, J., Hejtmanek, J. Physical Review B, APS, 2006, 73, 035126.

DOI: 10.1103/physrevb.73.035126

[5] Morelli, D. T.; Meisner, G. P.; Chen, B.; Hu, S. & Uher, C., Phys. Rev. B, American Physical Society, 1997, 56, 7376-7383.

[6] Lamberton, G. A. J.; Bhattacharya, S.; Littleton IV, R. T.; Kaeser, M. A.; Tedstrom, R. H.; Tritt, T. M.; Yang, J. & Nolas, G. S., Applied Physics Letters, AIP, 2002, 80, 598-600.

DOI: 10.1063/1.1433911

[7] Nolas, G. S.; Takizawa, H.; Endo, T.; Sellinschegg, H. & Johnson, D. C., Applied Physics Letters, AIP, 2000, 77, 52-54.

[8] Hermann, R. P.; Jin, R.; Schweika, W.; Grandjean, F.; Mandrus, D.; Sales, B. C. & Long, G. J., Phys. Rev. Lett., American Physical Society, 2003, 90, 135505.

[9] He, T., Chemistry of Materials, 2006, 18, 759-762.

[10] Mallik, R., Stiewe, C., Karpinski, G., Hassdorf, R., Müller, E.; Journal of Electronic Materials, 2009, 38, 1337-1343.

[11] Shi, X.; Zhang, W.; Chen, L. D. & Yang, J., Phys. Rev. Lett., American Physical Society, 2005, 95, 185503.

[12] Li, H.; Tang, X.; Zhang, Q. & Uher, C., Applied Physics Letters, AIP, 2009, 94, 102114.

[13] Wang, L.; Cai, K.; Wang, Y.; Li, H. & Wang, H., Applied Physics A: Materials Science & Processing, (2009).

[14] Platzek, D.; Zuber, A.; Stiewe, C.; Bähr, G.; Reinshaus, P.; Müller, E., Proc. 22nd Inter. Conf. on Thermoelectrics (ICT–2003), La Grande-Motte, France, 2003, Vol. 528.

DOI: 10.1109/ict.2003.1287567

In order to see related information, you need to Login.