Two Dimensional Graphene/h-BCN Based Devices with Large Ion/Ioff Ratio for Digital Applications


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We present a performance assessment of graphene/hexagonal Boron Nitride heterojunctions based transistors able to provide large current modulation. The study is performed by means of a multi-scale approach leveraging ab-initio simulations to capture the physics at the atomic scale, and tight-binding simulations to compute transport. In particular, we focus on two technological solutions, a vertical and a planar structure both able to provide large Ion/Ioff ratios. As we will show, due to reduced capacitative coupling, the planar structure outperforms the vertical device as far as digital applications are concerned.



Edited by:

Pietro Vincenzini, Yoon-Bong Hahn, Salvatore Iannotta, Andreas Lendlein, Vincenzo Palermo, Shashi Paul, Concita Sibilia, S. Ravi P. Silva and Gopalan Srinivasan




G. Fiori et al., "Two Dimensional Graphene/h-BCN Based Devices with Large Ion/Ioff Ratio for Digital Applications", Advances in Science and Technology, Vol. 77, pp. 266-269, 2013

Online since:

September 2012




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