The properties of n-type and p-type doped amorphous and microcrystalline films which had been prepared by means of hot-wire chemical vapor deposition were studied. Intrinsic amorphous hydrogenated material, which had been deposited at filament temperatures of 1900 and 2500C (using equal silane and H flow-rates), and intrinsic microcrystalline hydrogenated films which had been deposited by increasing the H dilution or decreasing the filament temperature, were doped by using PH3 (n-type doping) or trimethylboron (p-type doping). High growth rates were obtained for all of the amorphous hydrogenated samples. The deep-defect density dependence upon the dopant-to-silane flow-rate ratio was found to be consistent with a defect equilibrium doping model.

P.Brogueira, V.Chu, A.C.Ferro, J.P.Conde: Journal of Vacuum Science and Technology A, 1997, 15[6], 2968-82