Molecules of H were formed in crystalline samples which were treated with atomic H, and the effect of defects upon the formation of these H molecules was investigated. Raman measurements were performed on crystalline, micro-crystalline and amorphous material after treatment with atomic H. A vibrational line of H2 was observed in crystalline and micro-crystalline material after treatment with atomic H. The intensity of the vibrational line in micro-crystalline samples was approximately 20% of that observed in crystalline Si. No Raman signals, due to H2, were detected in amorphous hydrogenated material or in amorphous material which was produced by ion implantation. The results suggested that the H molecules which were observed in hydrogenated crystalline Si were trapped in interstitial sites in ion-damaged crystals.

N.Fukata, S.Sasaki, K.Murakami, K.Ishioka, K.Nakamura, M.Kitajima, S.Fujimura, J.Kikuchi, H.Haneda: Japanese Journal of Applied Physics - 2, 1997, 36[11A], L1456-9