Pore formation at the interface between a metal film and the upper Si layer in Si-on-insulator structures, under high-temperature conditions, was considered. It was assumed that the interface transmitted Si self-interstitials, and collected vacancies; thus resulting in vacancy-related defect formation. It was shown that a vacancy pile-up at the metal/Si-layer interface depended upon the deformations that were introduced in the Si layer by both the metal film and the buried insulator.

A.G.Akimov, M.J.Barabanenkov, V.N.Mordkovich: Journal of Applied Physics, 1998, 83[12], 7625-7