Samples of n-type material were studied, using deep-level transient spectroscopy, immediately after Cu diffusion and quenching. A donor level at Ec - 0.15eV, with a concentration of up to 1013/cm3 was detected. The amplitude of the deep-level transient spectroscopy peak decreased with storage time at room temperature, and stabilized at a concentration of between 4 x 1011 and 7 x 1011/cm3 after 15 to 20h. The activation energies and pre-factors of the decay of the deep-level transient spectroscopic peak in n-type material agreed with those for the reactivation of Cu-compensated B in p-type material. This correlation suggested that the deep level was either interstitial Cu itself, or a complex of interstitial Cu.

A.A.Istratov, H.Hieslmair, C.Flink, T.Heiser, E.R.Weber: Applied Physics Letters, 1997, 71[16], 2349-51