The electrical activity of the electron spin resonance-active interfacial point defects, Pb0 and Pb1 (unpaired Si bonds), was examined in (100)Si/SiO2 samples. After eliminating the H passivation factor, combined electrical and electron spin resonance measurements were performed on series of samples which had controlled Pb0 and Pb1 densities. It was found that Pb1 was electrically inactive as a degrading interface state and therefore had no direct electrical effect on device behavior. However, all of the Pb0 defects were electrically active; thus making these electron paramagnetic resonance-active defects unique.

A.Stesmans, V.V.Afanasev: Journal of Physics - Condensed Matter, 1998, 10[1], L19-25