The influence of the ramping rate, and starting temperature of the ramp, upon the generation of ring-like distributed stacking faults during the wet oxidation of Czochralski-type wafers was investigated. These parameters governed the average emission rate of interstitials that was required in order to maintain the strain-free growth of oxide precipitates. There was a good correlation between the stacking fault density and the required average emission rate of interstitials per precipitate. This indicated that the higher the required emission rate, the more strain was built into the growing oxide precipitates because of insufficient interstitial generation. This resulted in the increased nucleation of stacking faults. The density of stacking faults was compared with the ratio, of the total number of interstitials generated, to the total ramping period. The strain was proportional to the logarithm of the interstitial supersaturation around the growing oxide precipitates.

G.Kissinger, J.Vanhellemont, U.Lambert, D.Gräf, T.Grabolla, H.Richter: Japanese Journal of Applied Physics - 2, 1998, 37[3B], L306-8