Wafers with B concentrations of up to 2 x 1019/cm3 were characterized by delineating defects using SC1 solution, and analyzing them with regard to crystal-originated particles. No oxidation-induced stacking fault ring appeared, and the entire wafer displayed an homogeneous crystal-originated particle density following SC1 treatment of lightly B-doped ingots. The radial crystal-originated particle distribution changed upon increasing the B concentration without modifying the pulling process. The area which exhibited a high crystal-originated particle density shrank and vanished in the center of the wafer when the B concentration approached about 1019/cm3. An oxidation-induced stacking fault ring was found next to the area of high crystal-originated particle density; similar to the case of lightly B-doped material at a reduced pulling rate. It was assumed that B doping to a sufficiently high level modified the balance of vacancies and interstitials which was generated during crystal pulling, and changed the radial defect distribution.

M.Suhren, D.Gräf, U.Lambert, P.Wagner: Journal of the Electrochemical Society, 1997, 144[11], 4041-4