The self-interstitial concentration, as normalized with respect to the thermal equilibrium concentration, had previously been derived as a function of the diffusion time, the absolute temperature, the diffusivity, and the specimen thickness, by using the diffusion equation for self-interstitials in Si. It had also been demonstrated that the time-averaged and normalized self-interstitial concentration could be obtained, as a function of diffusion time and absolute temperature, from oxidation-induced stacking fault data. By combining the 2 concentrations, and using Stolwijk et al's relationship between diffusivity and thermal equilibrium concentration (derived from Au diffusion data for Si), the diffusivity and thermal equilibrium concentration were determined as a function of absolute temperature. The fractional component of the interstitialcy mechanism for Si self-diffusion was investigated by assuming local equilibrium between self-interstitials and vacancies. It was found that self-diffusion occurred mainly via vacancies.

T.Okino, T.Shimosaki, R.Takaue: Japanese Journal of Applied Physics - 1, 1997, 36[11], 6591-4