The annealing behavior of defects in F+- and B+-implanted samples was studied by using mono-energetic positron beams. In the case of specimens implanted to a F+ dose of 2 x 1013/cm2, the mean size of the open volume of defects before annealing was estimated to be close to that of divacancies. Vacancy-F complexes and vacancy clusters were formed after rapid thermal annealing (700C). The mean size of the open volume for the vacancy-F complexes was estimated to be close to that of monovacancies, and their annealing temperature was determined to be 800C. In the case of specimens implanted to a F+ dose of 4 x 1015/cm2, complexes between vacancy clusters and F atoms were introduced during solid-phase epitaxial growth of the amorphous region. They were observed even after rapid thermal annealing at 1100C.

A.Uedono, T.Kitano, K.Hamada, T.Moriya, T.Kawano, S.Tanigawa, R.Suzuki, T.Ohdaira, T.Mikado: Japanese Journal of Applied Physics - 1, 1997, 36[5A], 2571-80