The formation of oxidation-induced stacking fault nuclei during Czochralski crystal growth was investigated by using crystals which had been subjected to  in situ  annealing, for 1 or 4h, by halting pulling during crystal growth. The effects of  in situ  annealing at temperatures ranging from about 1160 to 1030C were studied. In positions which were held at about 1090 and 1030C, the radial distributions of oxidation-induced stacking faults, light-scattering tomography defects, and O precipitates after annealing, changed appreciably. In positions which were held at about 1090C, large light-scattering tomography defects were formed, but the oxidation-induced stacking fault ring disappeared from regions where it would have been present if pulling had not been halted. In positions which were held at about 1030C, the defects in the oxidation-induced stacking fault ring grew, its width increased, and the O precipitate density (inside and outside of the ring) decreased with the holding time. The radial distribution of defects at positions which were held at about 1160C was similar to that in a reference crystal which had not been halted. The results indicated that these defects were not formed up to 1160C, large light-scattering tomography defects formed at 1160 to 1090C, oxidation-induced stacking fault nuclei formed at 1090 to 1030C, and the O precipitate nuclei inside and outside of the oxidation-induced stacking fault ring formed below 1030C.

K.Harada, H.Furuya, M.Kida: Japanese Journal of Applied Physics - 1, 1997, 36[6A], 3366-73