Reaction of atomic H with B-doped Si(100) was studied by means of temperature-programmed desorption. It was noted that, in addition to adsorbing at surface sites, the H penetrated into B-doped Si(100) samples and became trapped by forming sub-surface B-H complexes. Temperature-programmed desorption spectra were obtained after exposure to atomic H and showed, in addition to the well-known dihydride (680K) and monohydride (795K) desorption features, peaks at 600 and 630K which were attributed to the decomposition of sub-surface B-H complexes.

G.Hess, P.Parkinson, B.Gong, Z.Xu, D.Lim, M.Downer, S.John, S.Banerjee, J.G.Ekerdt, S.K.Jo: Applied Physics Letters, 1997, 71[15], 2184-6