Wafers of Yb-implanted Si(001) were annealed at temperatures ranging from 800 to 1200C, and were studied by using cross-sectional transmission electron microscopy and electron diffraction. The results indicated that 2 layers of defects existed in the samples. One contained mainly micro-twins and the other contained Yb precipitates. The distribution and morphology of the defects depended mainly upon the annealing conditions. The higher the annealing temperature, the larger were the defects and the closer were the layers of defects to the wafer surface.

Y.Yang, H.Chen, Y.Q.Zhou, F.H.Li: Journal of Materials Science, 1997, 32[24], 6665-70