The mobility of individual 60º dislocations was studied in Czochralski grown bulk single Si1-xGex crystals, where x ranged from 0 to 5.5at%. It was found that the starting stress for dislocation motion increased with Ge concentration. The dislocation velocity increased with stress more quickly in samples with higher Ge contents. Intermittent loading techniques were used to study the kinetics of dislocation kink pair formation and relaxation. It was revealed that the duration of kink pair relaxation increased significantly with Ge concentration.

J.L.Iunin, V.I.Orlov, D.V.Dyachenko-Dekov, N.V.Abrosimov, S.N.Rossolenko, W.Schröder: Solid State Phenomena, 1997, 57-58, 419-24