Fault planes and stair-rod dislocations in stacking-fault trapezoids and stacking-fault tubes, in pseudomorphic ZnSe/GaAs(001) epitaxial layers, were characterized by using the classical stacking-fault pyramid as an internal reference. The acute-obtuse stair-rod dislocation pair in a stacking-fault trapezoid formed an extended C dislocation dipole. Stacking faults with a lozenge-shaped cross-section, in a stacking-fault tube, intersected to produce dislocation dipoles of alternating acute-obtuse stair-rod dislocations. The extended dislocation dipoles of the stacking-fault trapezoids and stacking-fault tubes could act as channels for the pipe diffusion of point defects.

N.Wang, I.K.Sou, K.K.Fung: Philosophical Magazine Letters, 1997, 76[3], 153-8