Molecular-beam epitaxial growth of ZnSe onto GaAs(110) substrates was studied by using reflection high-energy electron diffraction, atomic force microscopy, and transmission electron microscopy. An atomically flat and low-defect homo-epitaxial GaAs(110) buffer was grown, at about 430C, which had a V/III ratio greater than 150. At the beginning of ZnSe growth on a GaAs(110) buffer epitaxial layer, reflection high-energy electron diffraction oscillations were observed, and no facet was detected on a pseudomorphic ZnSe(110) surface. Low (less than 105/cm2) defect-density ZnSe films were also obtained without the Zn pre-exposure that was necessary for low-defect ZnSe(001) growth.

S.Miwa, L.H.Kuo, K.Kimura, A.Ohtake, T.Yasuda, C.G.Jin, T.Yao: Applied Physics Letters, 1997, 71[9], 1192-4