The temporal development of a diffusion profile, which exhibited components that were due to volume and dislocation diffusion (Harrison's type-B regime), was analyzed in terms of the LeClaire-Rabinovitch theory. The results of the analysis were applied to published diffusion profiles for As in Hg0.8Cd0.2Te, Zn in ZnTe, and Cd and Se in CdTe. They were shown to provide a consistent interpretation of the experimental data. Various alternative interpretations were shown to be inadequate. Evidence for Harrison's type-A regime was also found in data on Hg diffusion in CdTe. At large volume diffusion lengths, the possible involvement of diffusion via (sub)grain boundaries rather than isolated dislocations could not be excluded.

D.Shaw: Semiconductor Science and Technology, 1997, 12[9], 1079-91