Detailed analytical expressions for dry-etch damage defect distributions were presented which incorporated channelling and diffusion. The predominant parameter which affected damage depth was found to be the mean channelling length. It was shown that enhanced diffusion (due, for instance, to illumination) could increase the damage. The effect of damage upon depletion depth was also studied, and it was suggested that the channelling length could be deduced from the etch-depth dependence of conductance or Raman spectroscopic data.

M.Rahman: Journal of Applied Physics, 1997, 82[5], 2215-24