Heterostructures of CdTe on GaAs were prepared by means of molecular beam epitaxial deposition onto chemically etched and thermally deoxidized (001) GaAs substrates, or onto (001) GaAs (3 x 1) buffer layers which had been grown in situ by means of molecular beam epitaxy. Various growth processes were studied, leading to Te-induced (6 x 1) or (2 x 1) surface reconstructions during the early stages of growth. High-resolution cross-sectional transmission electron microscopy was used to examine the final interface structures which resulted from using the various substrate preparation methods, and surface reconstructions. The (2 x 1) surface reconstruction led to pure (001) growth, whereas the (6 x 1) reconstruction led to an interface which comprised small (111)-oriented inclusions. Deposition onto etched and deoxidized (001) GaAs wafers led to preferential CdTe growth within etch pits, and resulted in a macroscopically rough interface region.

J.E.Angelo, W.W.Gerberich, C.Bratina, L.Sorba, A.Franciosi: Journal of Crystal Growth, 1993, 130[3-4], 459-65