The dependence of Ga adatom surface diffusion upon the As flux during molecular beam epitaxial growth was investigated. Variations in the growth rate of GaAs layers, grown onto (001) surfaces adjacent to (111) surfaces, were measured by means of scanning microprobe reflection high-energy electron diffraction. The surface diffusion length was derived from the variations in the growth rate. It was found that the surface diffusion length of the Ga adatoms became greater under a lower As flux.

M.Hata, A.Watanabe, T.Isu: Journal of Crystal Growth, 1991, 111[1-4], 93-7