Systematic measurements were made of the surface diffusion lengths of Ga adatoms during the molecular beam epitaxy of this material in the presence of H or H2. The spatial variation in the growth rate on the (100) surface adjacent to the (111)A surface was deduced from the period of reflection high-energy electron diffraction intensity oscillations. The surface diffusion length of Ga adatoms, as estimated from the spatial variation in the growth rate, increased with increasing H or H2 pressure. It also increased as the substrate temperature was increased at a given H or H2 pressure. The diffusion length in the case of H was greater than that in the case of H2.

Y.Morishita, Y.Nomura, S.Goto, Y.Katayama: Applied Physics Letters, 1995, 67[17], 2500-2